Frisbie Research Group

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Yan Liang

Tsinghua University - Beijing, China; 2002
B.S. Chemistry
Tsinghua University - Beijing, China; 2005
M.S. Chemistry

Email: liangyan@cems.umn.edu

Research: Long-channel capacitors and displacement current measurement

My research focuses on using long-channel capacitors (LCCs) and displacement current measurement to study two critical interfaces in organic field-effect transistors: the organic semiconductor/dielectric interface and organic semiconductor/metal interface.

The LCC structure resembles a typical field-effect transistor with either source or drain electrode removed. However, the channel length was much longer in LCCs (1 – 6 mm) in order to increase the transit time and enhance the signal-to-noise ratio.



Long-channel capacitors (LCCs) and displacement current measurement (DCM) focus on the dynamic processes of conducting channel formation and annihilation, which are often overlooked in traditional FET DC measurements. In addition, the charge injection and extraction processes are separated in LCC measurement, whereas the two processes occur simultaneously in FET measurement. Moreover, the amount of injected, extracted, and trapped charge can be individually determined by integrating the displacement current with respect to time. These advantages make LCCs and DCM useful tools to study trapping/detrapping at the semiconductor/dielectric interfaces and injection/extraction at semiconductor/metal interfaces.



Publications

"Conducting channel formation and annihilation in organic field-effect structures," Liang, Y.; Frisbie C. D.; Chang, H-C.; and Ruden, P. P. J. Appl. Phys. 2009, 105 (2), 024514

"Low-voltage pentacene thin-film transistors with Ta2O5 gate insulators and their reversible light-induced threshold voltage shift," Liang, Y.; Dong, G-F.; Hu, Y.; Wang, L-D.; and Qiu Y. Appl. Phys. Letts. 2005, 86 (13), 132101

"Fabrication of pentacene thin-film transistors with patterned polyimide photoresist as gate dielectrics and research on their degradation," Liang, Y.; Dong, G-F.; Hu, Y-C.; Hu, Y.; Wang, L-D.; and Qiu Y. Chin. Phys. Letts. 2004, 21 (11), 2278-2280