VG SEMICON V80H MOLECULAR BEAM EPITAXY(MBE) with E-BEAM EVAPORATORS
for GaAs-based semiconductors, Ferromagnetic materials, and rare earth materials

RIBER 1000 MOLECULAR BEAM EPITAXY with E-BEAM EVAPORATOR
for Ni 2 Mn(Al, Ga, In, & Ge) Heusler alloys and GaSb-based semiconductors

VG SEMICON V80H CHEMICAL BEAM EPITAXY
for the growth of III-V semiconductors with carbon-doping and selective area epitaxy

RIBER 32P GAS-SOURCE MOLECULAR BEAM EPITAXY ( under construction )
for the device quality InP- and GaAs-based semiconductors

MATERIALS CHARACTERIZATION

VARIABLE TEMPERATURE - SCANNING TUNNELING MICROSCOPY (STM)

X-RAY PHOTOEMISSION SPECTROSCOPY (XPS)

AUGER ELECTRON MICROSCOPY (AES)

LOW ENERGY ELECTRON DIFFRACTION (LEED)

I-V & C-V MEASUREMENT STATION

VARIABLE TEMPERATURE - MAGNETO-OPTIC KERR EFFECT (MOKE)

HALL MEASUREMENT

CRYOSTAT FOR THE LOW TEMPERATURE MAGNETO-OPTICAL CHARACTERIZATION

DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS)

ELECTROCHEMICAL PROFILER